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PDF IXGP2N100 Data sheet ( Hoja de datos )
| Número de pieza | IXGP2N100 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage IGBT
VCES
IXGP 2N100 1000 V
IXGP 2N100A 1000 V
IC90
2.0 A
2.0 A
VCE(SAT)
2.7 V
3.5 V
Symbol
VCES
VCGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 150W
Clamped inductive load
PC
TJ
TJM
TSTG
Weight
TC = 25°C
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
Maximum Ratings
1000
V
1000
V
±20 V
±30 V
4
2
8
ICM = 6
@ 0.8 VCES
25
-55 ... +150
150
-55 ... +150
4
300
A
A
A
A
W
°C
°C
°C
g
°C
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVCES
IC = 25µA, VGE = 0 V
1000
V
VGE(th)
IC = 25µA, VCE = VGE
2.5 5.0 V
ICES VCE = 0.8 VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
10 µA
200 µA
IGES VCE = 0 V, VGE = ±20 V
+ 50 nA
VCE(sat)
IC = IC90, VGE = 15 V
IXGP2N100
IXGP2N100A
2.7 V
3.5 V
TO-220
1
2
3
1 = Gate
3 = Emitter
4
2 = Collector
4 = Collector
Features
International standard package
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
Capacitor discharge
Anode triggering of thyristors
DC choppers
Switched-mode and resonant-mode
power supplies.
© 2000 IXYS All rights reserved
95514C (9/00)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXGP2N100.PDF ] | |
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