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HUF75329D3ST PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 HUF75329D3ST
部品説明 N-Channel UltraFET Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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HUF75329D3ST Datasheet, HUF75329D3ST PDF,ピン配置, 機能
Data Sheet
HUF75329D3S
October 2013
N-Channel UltraFET Power MOSFET
55 V, 20 A, 26 mΩ
These N-Channel power MOSFETs are manufactured
using the innovative UltraFET process. This advanced
process technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA75329.
Ordering Information
PART NUMBER
HUF75329D3ST
PACKAGE
TO-252AA
BRAND
75329D
Features
• 20A, 55V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-252AA
GATE
SOURCE
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75329D3S Rev. C0

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