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Datasheet AON6708 PDF ( 特性, スペック, ピン接続図 )

部品番号 AON6708
部品説明 N-Channel MOSFET
メーカ Alpha & Omega Semiconductors
ロゴ Alpha & Omega Semiconductors ロゴ 
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AON6708 Datasheet, AON6708 PDF,ピン配置, 機能
General Description
SRFETTM The AON6708 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate
charge.This device is suitable for use as a low side
FET in SMPS, load switchng and general purpose
applications.
AON6708
30V N-Channel MOSFET
SRFET TM
Product Summary
VDS (V) = 30V
ID = 30A (VGS = 10V)
RDS(ON) < 4.7m(VGS = 10V)
RDS(ON) < 5.7m(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
D
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,J
TC=25°C
TC=100°C
ID
Pulsed Drain Current
IDM
Continuous Drain
Current H
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
30
30
120
20
15
40
240
62
25
2.5
1.6
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
42
1.2
Max
20
50
2.0
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

1 Page



AON6708 pdf, ピン配列
AON6708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
150
6V
120 10V
4.5V
90
60
30
VGS=3.5V
30
25
20
15
10
5
0
012345
VDS (Volts)
Figure 1: On-Region Characteristics
0
1
VDS=5V
125°C
25°C
1.5 2 2.5 3 3.5
VGS(Volts)
Figure 2: Transfer Characteristics
4
6
VGS=4.5V
5
4
3 VGS=10V
1.8
ID=20A
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
2
0 5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
30
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
10
ID=20A
8
125°C
6
4
25°C
2
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


3Pages


AON6708 電子部品, 半導体
AON6708
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
Vgs
+
VDC Vds
DUT -
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
Res istive Switching Test Circuit & Waveforms
RL
Vds
+
DUT VDC Vdd
-
Vgs
t d(on) t r
t on
t d(off) t f
t off
Charge
90%
10%
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LI AR
Vds
Vgs +
VDC Vdd
- Id
DUT
Vgs
Vds +
Vds -
Isd
Vgs
Ig
Diode RecoveryTest Circuit & Waveforms
Qrr = - Idt
DUT
Vgs
L
Isd IF
trr
dI/dt
+
VDC Vdd
IRM
- Vds
BVDSS
IAR
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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