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PDF AOL1434A Data sheet ( Hoja de datos )

Número de pieza AOL1434A
Descripción N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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AOL1434A
N-Channel SDMOSTM POWER Transistor
General Description
The AOL1434A is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low
gate charge. The result is outstanding efficiency with
controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
-RoHS Compliant
-Halogen Free
Features
VDS (V) = 25V
ID = 50A
RDS(ON) < 5m
RDS(ON) <10m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested!
100% R g Tested!
UltraSO-8TM Top View
S
G
D
Bottom tab
connected to
drain
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain CurrentC
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=50uH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
25
±20
50
43
100
16
13
50
63
30
15
2
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
48
3.5
Max
20
60
5
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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AOL1434A pdf
AOL1434A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
TA=25°C
70
60
50 TA=100°C
40 TA=150°C
30
20 TA=125°C
10
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
60
50
40
30
20
10
0
0
50
40
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
18
175
TA=25°C
40
30
30
20 20
10
0
0
10
1
10
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note F)
175
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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