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Número de pieza | AO4490 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO4490 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! AO4490
30V N-Channel MOSFET
General Description
The AO4490 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V, while
retaining a 20V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a load switch and
general purpose applications.
Product Summary
VDS (V) = 30V
ID = 16A
(VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 10V)
RDS(ON) < 10mΩ (VGS = 4.5V)
ESD Protected
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
G
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH G
ID
IDM
IAR
EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
16
13
120
30
135
2.8
1.8
-55 to 150
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
32
62
18
Max
45
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page AO4490
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
TA=10S
2
1
TA=Steady-State
0
0 25 50 75 100 125 150 175
TAmbient (°C)
Figure 12: Power De-rating (Note A)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AO4490.PDF ] |
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