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Datasheet 23NM50N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 23NM50N | N-channel Power MOSFET STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET
Features
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
■ 100% avalanche tested ■ Low input c |  STMicroelectronics | mosfet |
23N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 23N50E | FMH23N50E FMH23N50E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability
FUJI PO  Fuji Electric data | | |
| 2 | 23NM50N | N-channel Power MOSFET STB23NM50N, STF23NM50N STP23NM50N, STW23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET
Features
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
■ 100% avalanche tested ■ Low input c STMicroelectronics mosfet | | |
| 3 | 23NM60N | STB23NM60N STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
Features
Type STB23NM60N STI23NM60N STF23NM60N STP23NM60N STW23NM60N
1. Limited only by maximum temperature allowed ■ ■ ■
VDSS STMicroelectronics data | | |
| 4 | 23NM60ND | STB23NM60ND STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET (with fast diode) in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes STB23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 650 V < 0.180 Ω STMicroelectronics data | |
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