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3LN01M PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 3LN01M
部品説明 Small Signal MOSFET
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 



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3LN01M Datasheet, 3LN01M PDF,ピン配置, 機能
3LN01M
Small Signal MOSFET
30V, 3.7, 0.15A, Single N-Channel
Features
Low ON-Resistance
Ultrahigh-Speed Switching
1.5V Drive
Halogen Free Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
30
±10
0.15
V
V
A
Drain Current (Pulse)
PW10μs, duty cycle1%
IDP 0.6 A
Power Disspation
Junction Temperature
Storage Temperature
PD
0.15
W
Tj 150 °C
Tstg
55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
www.onsemi.com
Electrical Connection
N-Channel
3
1
1:Gate
2:Source
2 3:Drain
Packing Type:TL
Marking
LOT No.
YA
LOT No.
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
VDS=10V, ID=80mA
min
30
0.4
0.15
Value
Unit
typ max
V
1 μA
±10 μA
1.3 V
0.22
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November 2014 - Rev. 1
1
Publication Order Number :
3LN01M/D

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