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PDF IRF3805L-7PPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF3805L-7PPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRF3805S-7PPbF
IRF3805L-7PPbF
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
HEXFET® Power MOSFET
D VDSS = 55V
G RDS(on) = 2.6mΩ
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
ID = 160A
D2Pak 7 Pin
IRF3805S-7PPbF
TO-263CA 7 Pin
IRF3805L-7PPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
gRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
jJunction-to-Case
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient
ijJunction-to-Ambient (PCB Mount, steady state)
Max.
240
170
160
1000
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013
1 page  
IRF3805S/L-7PPbF
250
Limited By Package
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
ID = 140A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.1
0.01
0.001
1E-005
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W)
τCτ 0.0794
τ3τ3 0.1474
0.2737
τi (sec)
0.000192
0.000628
0.014012
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013
5 Page 
IRF3805S/L-7PPbF
TO-263CA 7 Pin Long Leads Package Outline
Dimensions are shown in millimeters (inches)
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Revision History
Date
10/25/2013
Comments
•ÃRemove the "Automotive MOSFET" on the header, on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 25, 2013
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRF3805L-7PPbF.PDF ] | |
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