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PDF IRFS4115-7PPbF Data sheet ( 特性 )

部品番号 IRFS4115-7PPbF
部品説明 Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 

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IRFS4115-7PPbF Datasheet, IRFS4115-7PPbF PDF,ピン配置, 機能
PD -97147
IRFS4115-7PPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ. 10.0m:
max. 11.8m:
S ID
105A
D
S
SS
S
S
G
D2Pak 7 Pin
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
Peak Diode Recovery e
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case jk
Junction-to-Ambient (PCB Mount) ij
www.irf.com
G
G ate
D
Drain
S
Source
Max.
105
74
420
380
2.5
± 20
32
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
230
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
1
11/7/08

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IRFS4115-7PPbF pdf, ピン配列
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60μs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
3.0
VDS = 50V
60μs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig 3. Typical Transfer Characteristics
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
Coss
0 Crss
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
IRFS4115-7PPbF
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
5.0V
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
3.0
ID = 63A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
16
ID= 63A
12
VDS= 120V
VDS= 75V
VDS= 30V
8
4
0
0 20 40 60 80 100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3


3Pages


IRFS4115-7PPbF 電子部品, 半導体
IRFS4115-7PPbF
6.0
5.0
4.0
ID = 1.0A
ID = 1.0mA
ID = 250μA
50
40
30
3.0
2.0
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 16. Threshold Voltage Vs. Temperature
50
20
IF = 42A
10 VR = 127V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
2400
40
30
20
IF = 63A
10 VR = 127V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
2400
2000
1600
1200
800
IF = 42A
VR = 127V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
2000
1600
1200
800
IF = 63A
VR = 127V
400 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com

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