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IRFB3256PbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRFB3256PbF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRFB3256PbFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97727
IRFB3256PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.7mΩ
3.4mΩ
206A
S ID (Package Limited)
75A
D
DS
G
TO-220AB
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
dEAS Single Pulse Avalanche Energy (Thermally Limited)
ÃIAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
ijJunction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
D
Drain
S
Source
Max.
206
172
75
820
300
2.0
± 20
3.3
-55 to + 175
300 (1.6mm from case)
x x10lbf in (1.1N m)
340
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
09/22/11
1 Page 1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
4.25V
10
1
0.01
≤60μs PULSE WIDTH
Tj = 25°C
0.1 1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 25V
≤60μs PULSE WIDTH
1.0
234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000 Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.0V
4.75V
4.50V
4.25V
IRFB3256PbF
4.25V
10
1
0.01
≤60μs PULSE WIDTH
Tj = 175°C
0.1 1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.2
ID = 75A
2.0 VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
ID= 75A
12.0
VDS= 48V
10.0
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3
3Pages IRFB3256PbF
4.0
3.5
3.0
2.5
2.0 ID = 150μA
1.5
ID = 1.0mA
ID = 1.0A
1.0
0.5
-75
-25 25
75 125
TJ , Temperature ( °C )
175
Fig 16. Threshold Voltage vs. Temperature
16
IF = 45A
14 VR = 51V
12
TJ = 25°C
TJ = 125°C
10
8
6
4
2
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
500
IF = 45A
400
VR = 51V
TJ = 25°C
TJ = 125°C
300
16
IF = 30A
14 VR = 51V
TJ = 25°C
12 TJ = 125°C
10
8
6
4
2
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
500
IF = 30A
400
VR = 51V
TJ = 25°C
TJ = 125°C
300
200
100
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
200
100
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRFB3256PbF | HEXFET Power MOSFET | International Rectifier |