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PDF IRF2804LPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF2804LPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of other
applications.
PD - 95332B
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
HEXFET® Power MOSFET
D VDSS = 40V
G RDS(on) = 2.0mΩ
S ID = 75A
TO-220AB
IRF2804PbF
D2Pak
TO-262
IRF2804SPbF IRF2804LPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
VGS
EAS
EAS (tested)
IAR
EAR
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
iSingle Pulse Avalanche Energy Tested Value
cAvalanche Current
hRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
jJunction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
Max.
270
190
75
1080
300
2.0
± 20
540
1160
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
l0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
05/12/10
1 page  
IRF2804/S/LPbF
300
250 Limited By Package
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-008
1E-007
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRF2804/S/LPbF
TO-262 Part Marking Information
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Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf2804.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRF2804LPbF.PDF ] | |
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