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IRF7739L2PBF の電気的特性と機能

IRF7739L2PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7739L2PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7739L2PBF Datasheet, IRF7739L2PBF PDF,ピン配置, 機能
l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified
IRF7739L2PbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
40V min ±20V max 0.70m@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
Applicable DirectFET Outline and Substrate Outline 
SB SC
M2
M4
L8 DirectFET™ ISOMETRIC
L4 L6 L8
The IRF7739L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7739L2TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.
Part number
Package Type
IRF7739L2TRPbF DirectFET2 Large Can
IRF7739L2TR1PbF DirectFET2 Large Can
Standard Pack
Form
Q uan tity
Tape and Reel
4000
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice #264
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
0.93
ID = 160A
0.92
8 0.91
6 TJ = 25°C
0.90
0.89
4 0.88
VGS = 10V
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80 120
Units
V
A
mJ
A
160 200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.021mH, RG = 25, IAS = 160A.
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014

1 Page





IRF7739L2PBF pdf, ピン配列
Absolute Maximum Ratings
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
TP
TJ
TSTG
fPower Dissipation
fPower Dissipation
cPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
IRF7739L2PbF
Max.
125
63
3.8
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
1.2
0.50
Units
W
°C
Units
°C/W
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.1080
0.6140
τi (sec)
0.000171
0.053914
τ4τ4 0.4520 0.006099
1.47e-05 0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case „
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„
ˆ
TC measured with
Used double sided
thermocouple incontact with top (Drain) of
cooling, mounting pad with large heatsink.
part.
Š
back and with small clip
Rθ is measured at TJ of
heatsink.
approximately
90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014


3Pages


IRF7739L2PBF 電子部品, 半導体
1000
Duty Cycle = Single Pulse
100 0.01
0.05
10 0.10
IRF7739L2PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assumingTj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming∆Τj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current vs. Pulsewidth
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cy cle
250 ID = 160A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 13, 14:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·ta
+
‚
-

RG
D.U.T +
ƒ
-
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
di/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple 5%
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
6
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014

6 Page



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部品番号部品説明メーカ
IRF7739L2PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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