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PDF IRF7779L2PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7779L2PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
IRF7779L2PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
150V min ±20V max 9.0mΩ@ 10V
Qg tot
Qgd
Vgs(th)
97nC
33nC
4.0V
S
S
D GS
S
S
S
SD
S
Applicable DirectFET Outline and Substrate Outline
SB SC
M2
M4
L8 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Orderable part number
Package Type
Standard Pack
Form
Quantity
Note
IRF7779L2TRPbF
DirectFET2 Large Can
Tape and Reel
4000
"TR" suffix
IRF7779L2TR1PbF
DirectFET2 Large Can
Tape and Reel
1000
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
50.00
40.00
ID = 40A
20.00
TC= 25°C
Max.
150
±20
67
47
11
375
270
270
40
Units
V
A
mJ
A
30.00
20.00
TJ = 125°C
10.00
0.00
TJ = 25°C
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
16.00
12.00
VGS = 7.0V
VGS = 8.0V
VGS = 10V
VGS = 15V
8.00
50 70 90 110
ID, Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.33mH, RG = 25Ω, IAS = 40A.
1
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IRF7779L2PbF
1000
100
TJ = 175°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100μsec
10 1msec
10msec
1 DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
01
10
100 1000
VDS , Drain-toSource Voltage (V)
Fig11. Maximum Safe Operating Area
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
5.5 ID = 1.0A
5.0 ID = 1.0mA
4.5 ID = 250μA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 7.8A
12A
BOTTOM 40A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
5
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May 6, 2014
5 Page 
IRF7779L2PbF
Qualification Information†
Qualification level
Industrial ††
(per JEDEC JESD47F††† guidelines)
Comments: This family of products has passed JEDEC’s Industrial
qualification. IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
DFET2
MSL1
RoHS Compliant
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
5/6/2014
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
• Updated data sheet based on corporate template.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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May 6, 2014
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