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IRFZ46NPbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ46NPbF
部品説明 Power MOSFETs
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRFZ46NPbF Datasheet, IRFZ46NPbF PDF,ピン配置, 機能
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94952A
IRFZ46NPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 16.5m
ID = 53A‡
S
TO-220AB
Max.
53‡
37
180
107
0.71
± 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
°C/W
1
09/30/10

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