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PDF IRF7739L1TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7739L1TRPBF | |
| Descripción | Power MOSFETs | |
| Fabricantes | International Rectifier | |
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IRF7739L1TRPbF
Applications
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
Applicable DirectFET Outline and Substrate Outline
SB SC
M2 M4
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
40V min ±20V max 0.70mΩ@ 10V
Qg tot
Qgd
Vgs(th)
220nC
81nC
2.8V
DG
S
S
S
S
L8
L4
S
S
SD
S
L6
DirectFET ISOMETRIC
L8
Description
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
IRF7739L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7739L1TRPbF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
EAS
IAR
10
8
6
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 160A
0.93
0.92
TJ = 25°C
0.91
0.90
VGS = 10V
0.89
4 0.88
2
TJ = 125°C
0.87
0.86
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.85
0
40
Max.
40
±20
270
190
46
375
1070
270
160
80 120
Units
V
A
mJ
A
160 200
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on the hyperlink (to the relevant technical document) for more details.
Click on the hyperlink (to the DirectFET website) for more details
Surface mounted on 1 in. square Cu board, steady state.
ID , Drain Current (A)
Fig 2. Typical On-Resistance vs. Drain Current
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
1 www.irf.com © 2012 International Rectifier
February 13 ,2013
1 page  
IRF7739L1TRPbF
1000
TJ = 175°C
100
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10 TJ = 25°C
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
100 1msec
DC 10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
300 5.0
4.5
250
4.0
200
3.5
150 3.0
2.5
100 ID = 250μA
2.0 ID = 1.0mA
50 1.5 ID = 1.0A
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
1100
1000
900
800
ID
TOP 29A
46A
BOTTOM 160A
700
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2012 International Rectifier
February 13 ,2013
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