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PDF 9R340C Data sheet ( 特性 )

部品番号 9R340C
部品説明 IPB90R340C3
メーカ Infineon
ロゴ Infineon ロゴ 

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9R340C Datasheet, 9R340C PDF,ピン配置, 機能
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
VDS @ TJ=25°C
RDS(on),max @TJ=25°C
Qg,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16

1 Page





9R340C pdf, ピン配列
IPB90R340C3
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related 6)
C o(er)
Effective output capacitance, time
related 7)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
Fall time
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 500 V
V DD=400 V,
V GS=10 V, I D=9.2A,
R G=23.1 W
-
-
-
-
-
-
-
-
2400
120
71
280
70
20
400
25
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs - 11 - nC
Q gd V DD=400 V, I D=9.2 A, - 41 -
Q g V GS=0 to 10 V
- 94 -
V plateau
- 4.6 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=9.2 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.8 1.2 V
- 510 - ns
- 11 - µC
- 41 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T J,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
5) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.
Rev. 2.0
page 3
2012-04-16


3Pages


9R340C 電子部品, 半導体
9 Typ. gate charge
V GS=f(Q gate); I D=9.2 A pulsed
parameter: V DD
10
IPB90R340C3
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T J
102
8 25 °C, 98%
150 °C, 98%
101
6
400 V
720 V
150 °C
25 °C
4
100
2
0
0 20 40 60
Qgate [nC]
11 Avalanche energy
E AS=f(T J); I D=3.1A; V DD=50 V
80 100
10-1
0
0.5 1 1.5
VSD [V]
12 Drain-source breakdown voltage
V BR(DSS)=f(T J); I D=0.25 mA
2
700 1050
600
1000
500
950
400
300
900
200
850
100
0
25 50 75 100 125 150
TJ [°C]
800
-60 -20 20 60 100 140 180
TJ [°C]
Rev. 2.0
page 6
2012-04-16

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