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FDP085N10AのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDP085N10A |
| |
部品説明 | N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDP085N10Aダウンロード(pdfファイル)リンクがあります。 Total 9 pages
FDP085N10A
N-Channel PowerTrench® MOSFET
100 V, 96 A, 8.5 mΩ
November 2013
Features
• RDS(on) = 7.35 mΩ (Typ.) @ VGS = 10 V, ID = 96 A
• Fast Switching Speed
• Low Gate Charge, QG = 31 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s PowerTrench® process that has been tailored to mini-
mize the on-state resistance while maintaining superior
switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
D
GDS TO-220
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP085N10A_F102
100
±20
96
68
384
269
6.0
188
1.25
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP085N10A_F102
0.8
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
1
www.fairchildsemi.com
1 Page Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0V
10.0V
8.0V
6.5V
6.0V
100 5.5V
5.0V
10
5
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS, Drain-Source Voltage[V]
5
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
18
*Note: TC = 25oC
16
VGS = 10V
12
8
VGS = 20V
4
0 100 200 300 400
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
Coss
*Note:
100 1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
100.1 1 10
VDS, Drain-Source Voltage [V]
100
Figure 2. Transfer Characteristics
300
100
175oC
25oC
10
-55oC
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
12 3 4 5 6 7
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
175oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 20V
8 VDS = 50V
VDS = 80V
6
4
2
*Note: ID = 96A
0
0 7 14 21 28 35
Qg, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
3
www.fairchildsemi.com
3Pages IG = const.
Figure 14. Gate Charge Test Circuit & Waveform
V10GVS
VDS
VGS
RG
RL
VDD
VDS
90%
DUT
VGS 10%
td(on)
tr
t on
Figure 15. Resistive Switching Test Circuit & Waveforms
td(off)
tf
t off
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDP085N10A Rev. C1
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDP085N10A | N-Channel PowerTrench MOSFET | micross |
FDP085N10A | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |