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Datasheet NP90N055VUK Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NP90N055VUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP90N055VUK
MOS FIELD EFFECT TRANSISTOR
R07DS0578EJ0100 Rev.1.00
Nov 29, 2011
Description
The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 |  Renesas | transistor |
NP9 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NP90N03VHG | MOS FIELD EFFECT TRANSISTOR NP90N03VHG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Description
The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID Renesas transistor | | |
| 2 | NP90N03VLG | MOS FIELD EFFECT TRANSISTOR NP90N03VLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Description
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID Renesas transistor | | |
| 3 | NP90N04MUG | N-CHANNEL POWER MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP90N04MUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP90N04MUG-S18-AY Note
Pure Sn (Tin)
Renesas data | | |
| 4 | NP90N04MUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP90N04MUK, NP90N04NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0601EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.8 m MAX Renesas transistor | | |
| 5 | NP90N04NUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP90N04MUK, NP90N04NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0601EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.8 m MAX Renesas transistor | | |
| 6 | NP90N04VUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP90N04VUK
MOS FIELD EFFECT TRANSISTOR
R07DS0577EJ0100 Rev.1.00
Nov 29, 2011
Description
The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.8 m MAX. (VGS = 10 V, Renesas transistor | | |
| 7 | NP90N055MUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP90N055MUK, NP90N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0602EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.8 m M Renesas transistor | |
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