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AUIRFS8408 の電気的特性と機能

AUIRFS8408のメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 AUIRFS8408
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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AUIRFS8408 Datasheet, AUIRFS8408 PDF,ピン配置, 機能
AUTOMOTIVE GRADE
AUIRFS8408
AUIRFSL8408
Features
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features
of this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of other
applications.
Applications
l Electric Power Steering (EPS)
l Battery Switch
l Start/Stop Micro Hybrid
l Heavy Loads
l SMPS
G
D
S
G
Gate
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.3mΩ
1.6mΩ
c317A
195A
DD
S
G
D2Pak
AUIRFS8408
S
D
G
TO-262
AUIRFSL8408
D
Drain
S
Source
Ordering Information
Base part number Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFSL8408
TO-262
Tube
50
AUIRFSL8408
AUIRFS8408
D2Pak
Tube
50
AUIRFS8408
Tape and Reel Left
800
AUIRFS8408TRL
Tape and Reel Right
800
AUIRFS8408TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
dContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
™Max.
317
™224
195
l1270
Units
A
PD @TC = 25°C Maximum Power Dissipation
294 W
Linear Derating Factor
1.96
W/°C
VGS Gate-to-Source Voltage
± 20
V
TJ Operating Junction and
-55 to + 175
TST G
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
eEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (tested)
IAR
EAR
ÃeSingle Pulse Avalanche Energy Tested Value
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
kParameter
Junction-to-Case
jJunction-to-Ambient (PCB Mount)
490
800
See Fig. 14, 15, 24a, 24b
Typ.
–––
–––
Max.
0.51
40
mJ
A
mJ
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2013 International Rectifier
April 25, 2013

1 Page





AUIRFS8408 pdf, ピン配列
AUIRFS/SL8408
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
0.1
4.5V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100 TJ = 175°C
10
TJ = 25°C
1
0.1
2
VDS = 10V
60μs PULSE WIDTH
4 6 8 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1000000
100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
Ciss
Crss Coss
100
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3 www.irf.com © 2013 International Rectifier
1000
100
10
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.0
1.8
ID = 100A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -20 20 60 100 140 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
12.0 ID= 100A
VDS= 32V
10.0
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0
50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 25, 2013


3Pages


AUIRFS8408 電子部品, 半導体
5
ID = 100A
4
3 TJ = 125°C
2
1 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 16. On-Resistance vs. Gate Voltage
10
IF = 60A
8
VR = 34V
TJ = 25°C
TJ = 125°C
6
4
2
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
10
IF = 100A
8
VR = 34V
TJ = 25°C
TJ = 125°C
6
4
2
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 20 - Typical Recovery Current vs. dif/dt
6 www.irf.com © 2013 International Rectifier
AUIRFS/SL8408
4.5
3.5
2.5
ID = 250μA
ID = 1.0mA
1.5 ID = 1.0A
0.5
-75
-25 25 75 125 175
TJ , Temperature ( °C )
225
Fig 17. Threshold Voltage vs. Temperature
240
220 IF = 60A
200
VR = 34V
TJ = 25°C
180 TJ = 125°C
160
140
120
100
80
60
40
0
200 400 600 800 1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
200
IF = 100A
160
VR = 34V
TJ = 25°C
TJ = 125°C
120
80
40
0
0 200 400 600 800 1000
diF /dt (A/μs)
Fig. 21 - Typical Stored Charge vs. dif/dt
April 25, 2013

6 Page



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