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PDF IRF6646PbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6646PbF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97224A
IRF6646PbF
IRF6646TRPbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
VDSS
80V max
Typical values (unless otherwise specified)
VGS
RDS(on)
±20V max
7.6mΩ@ 10V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
36nC 12nC 2.0nC 48nC 18nC 3.8V
MN
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MN
Description
The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input
voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced
total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for
system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
80
±20
12
9.6
68
96
230
7.2
Units
V
A
mJ
A
0.05
0.04
ID = 7.2A
0.03
0.02
0.01
0
4
TJ = 25°C
68
TJ = 125°C
10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
12.0
10.0
8.0
ID= 7.2A
VDS= 40V
VDS= 16V
6.0
4.0
2.0
0.0
0
Fig 2.
10 20 30 40
QG Total Gate Charge (nC)
Typical Total Gate Charge vs. Gate-to-Source
Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 8.8mH, RG = 25Ω, IAS = 7.2A.
1
08/24/06
1 page  
1000
100
10 TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
IRF6646PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10 1msec
10msec
1
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
14 6.0
ID = 150µA
12 ID = 250µA
5.0 ID = 1.0mA
10 ID = 1.0A
8
4.0
6
4 3.0
2
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
1000
900
800
700
2.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID
TOP 3.3A
4.0A
BOTTOM 7.2A
600
500
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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