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NP82N06PDGのメーカーはRenesasです、この部品の機能は「N-CHANNEL POWER MOS FET」です。 |
部品番号 | NP82N06PDG |
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部品説明 | N-CHANNEL POWER MOS FET | ||
メーカ | Renesas | ||
ロゴ | |||
このページの下部にプレビューとNP82N06PDGダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP82N06PDG-E1-AY Note
NP82N06PDG-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low Ciss
Ciss = 5700 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±270
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C)
PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 37
Repetitive Avalanche Energy Note2
EAR 137
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18227EJ1V0DS00 (1st edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2006
1 Page NP82N06PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited
(at VGS = 10 V)
ID(Pulse)
PW = 100 μs
100
ID(DC)
10 DC
1 ms
10 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1 Power Dissipation Limited
TC = 25°C
Single pulse
0.1
0.1 1
10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.05°C/W
0.1
0.01
100μ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse
100 1000
Data Sheet D18227EJ1V0DS
3
3Pages PACKAGE DRAWING (Unit: mm)
TO-263 (MP-25ZP)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
NP82N06PDG
0.75 ±0.2
2.54
12 3
0.6 ±0.2
0 to 8˚
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6 Data Sheet D18227EJ1V0DS
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
NP82N06PDG | N-CHANNEL POWER MOS FET | Renesas |