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PDF IRF6797MPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF6797MPbF | |
| Descripción | HEXFET Power MOSFET plus Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD - 97320A
IRF6797MPbF
IRF6797MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead and Bromide
l Integrated Monolithic Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
Qg tot
45nC
Qgd
13nC
Qgs2
6.2nC
Qrr
38nC
Qoss
38nC
Vgs(th)
1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
25 V
±20
36
29 A
210
300
260 mJ
30 A
4 14.0
3
ID = 36A
12.0 ID= 30A
10.0
VDS= 20V
VDS= 13V
8.0
2
TJ = 125°C
6.0
1
TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
4.0
2.0
0.0
0
20 40 60 80 100 120
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.57mH, RG = 25Ω, IAS = 30A.
1
03/16/09
1 page  
1000
100
10
TJ = 150°C
TJ = 25°C
1 TJ = -40°C
VGS = 0V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
220
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
1000
100
10
IRF6797MTRPbF
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µsec
10msec
1msec
DC
1 TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
2.0
ID = 10mA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 7.6A
19A
BOTTOM 30A
600
400
200
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6797MPbF.PDF ] | |
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