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PDF LBSS138LT1G Data sheet ( Hoja de datos )
| Número de pieza | LBSS138LT1G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers,printers,
PCMCIA cards, cellular and cordless telephones.
LBSS138LT1G
S-LBSS138LT1G
●FEATURES
1)Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2)Miniature SOT–23 Surface Mount Package saves board space
3)Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
4)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
5) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●ORDERING INFORMATION
Device
Marking
LBSS138LT1G
J1
LBSS138LT3G
J1
Shipping
3000/Tape&Reel
10000/Tape&Reel
3
1
2
SOT– 23 (TO–236AB)
200 mAMPS
50 VOLTS
R DS(on) = 3.5 W
N - Channel
3
1
●MAXIMUM RATINGS(Ta = 25℃ unless otherwise noted))
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Symbol
VDSS
VGS
Value
50
20
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp 10 s)
ID 200
IDM 800
Unit
Vdc
Vdc
mA
Total Power Dissipation @ TA = 25C
PD 225 mW
Operating and Storage Temperature Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TJ, Tstg
RθJA
TL
– 55 to
150 C
556 C/W
260 C
2
June,2015
Rev.A 1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LBSS138LT1G.PDF ] | |
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