|
|
LBSS84LT1GのメーカーはLeshan Radio Companyです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | LBSS84LT1G |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Leshan Radio Company | ||
ロゴ | |||
このページの下部にプレビューとLBSS84LT1Gダウンロード(pdfファイル)リンクがあります。 Total 5 pages
LESHAN RADIO COMPANY, LTD.
POWER MOSFET
P-CHANNEL 130mAmps,50Volts
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters,
load switching , power management in portable and battery–
powered products such as computers , printers , cellular and
cordless telephones.
LBSS84LT1G
S-LBSS84LT1G
3
●FEATURES
1)Energy Efficient
2)Miniature SOT–23 Surface Mount Package Saves Board Space
3)We declare that the material of product compliant with RoHS
requirements and Halogen Free.
4)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
1
2
SOT-23
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS84LT1G PD 3000/Tape&Reel
LBSS84LT3G
PD 10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 μs)
Total Power Dissipation @ TA = 25°C
Junction and Storage temperature
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for
SolderingPurposes, for 10 seconds
Symbol Limits Unit
VDSS
50
V
VGS ±20 V
mA
ID 130
IDM 520
PD 225 mW
Tj,Tstg −55∼+150 ℃
RΘJA
556 ℃/W
TL 260 ℃
May,2015
Rev.B 1/5
1 Page LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
ELRCTRICAL CHARACTERISTICS CURVES
0.6
VDS=10V
0.5
0.4
0.3
0.2
0.1
0.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
25℃
-55℃
150℃
FIG.1 Transfer Characteristics
20
18 VGS=4.5V
16
14
12
10
8
6
4
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, Drain Current (A)
VGS=4.5V Tj=25℃
VGS=4.5V Tj=150℃
VGS=4.5V Tj=-55℃
FIG.3 On-Resistance versus Drain Current
0.50
0.45 TJ=25℃
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-to-Source Voltage (V)
VGS=2.25V
VGS=3V
VGS=2.5V
VGS=3.25V
VGS=2.75V
VGS=3.5V
FIG.2 On-Region Characteristics
8
7 VGS=10V
6
5
4
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6
ID, Drain Current (A)
VGS=10V Tj=25℃
VGS=10V Tj=150℃
VGS=10V Tj=-55℃
FIG.4 On-Resistance versus Drain
Current
May,2015
Rev.B 3/5
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ LBSS84LT1G データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
LBSS84LT1 | Power MOSFET 130m Amps / 50 Volts (P-Channel SOT -23) | Leshan Radio Company |
LBSS84LT1G | Power MOSFET ( Transistor ) | Leshan Radio Company |