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L2N7002WT1G の電気的特性と機能

L2N7002WT1GのメーカーはLeshan Radio Companyです、この部品の機能は「Small Signal MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 L2N7002WT1G
部品説明 Small Signal MOSFET
メーカ Leshan Radio Company
ロゴ Leshan Radio Company ロゴ 




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L2N7002WT1G Datasheet, L2N7002WT1G PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT–323
FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
ORDERING INFORMATION
Device
Marking
L2N7002WT1G
6C
L2N7002WT3G
6C
MAXIMUM RATINGS(Ta = 25)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VDSS
VDGR
Value
60
60
Drain Current
– Continuous TC = 25C (Note 1.)
TC = 100C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 s)
ID
ID
IDM
VGS
VGSM
±115
±75
±800
±20
±40
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Unit
Vdc
Vdc
mAdc
Simplified Schematic
Gate 1
3 Drain
Source 2
Vdc
Vpk
(Top View)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25C
PD
225 mW
Derate above 25C
1.8 mW/C
Thermal Resistance, Junction to Ambient RθJA 556 C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25C
Derate above 25C
PD
300 mW
2.4 mW/C
Thermal Resistance, Junction to Ambient Rθ JA 417 C/W
Junction and Storage Temperature
TJ, Tstg -55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4

1 Page





L2N7002WT1G pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
ELECTRICAL CHARACTERISTIC CURVES
On-Region Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-to-Source Voltage (V)
VGS=3V
VGS=5V
VGS=7V
VGS=9V
VGS=4V
VGS=6V
VGS=8V
VGS=10V
FIG1
Temperature Static Drain-Source
On-Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60-40-20 0 20 40 60 80 100120140
T, Temperature ()
FIG3
Transfer Characteristics
1.0
VGS=10V
0.8
0.6
0.4
0.2
0.0
0 1 2 3 4 5 6 7 8 9 10
-55
25
125
VGS, Gate Source Voltage (V)
FIG2
Temperature vs Gate Threshold Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-60 -40 -20 0 20 40 60 80 100 120 140
T, Temperature ()
FIG4
May,2015
Rev.A 2/4


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部品番号部品説明メーカ
L2N7002WT1G

Small Signal MOSFET

Leshan Radio Company
Leshan Radio Company


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