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L2N7002WT1GのメーカーはLeshan Radio Companyです、この部品の機能は「Small Signal MOSFET」です。 |
部品番号 | L2N7002WT1G |
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部品説明 | Small Signal MOSFET | ||
メーカ | Leshan Radio Company | ||
ロゴ | |||
このページの下部にプレビューとL2N7002WT1Gダウンロード(pdfファイル)リンクがあります。 Total 4 pages
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts N–Channel SOT–323
●FEATURES
1)We declare that the material of product compliant
with RoHS requirements and Halogen Free.
2)ESD Protected:1000V
3)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
●ORDERING INFORMATION
Device
Marking
L2N7002WT1G
6C
L2N7002WT3G
6C
●MAXIMUM RATINGS(Ta = 25℃)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Shipping
3000/Tape&Reel
10000/Tape&Reel
Symbol
VDSS
VDGR
Value
60
60
Drain Current
– Continuous TC = 25C (Note 1.)
TC = 100C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 s)
ID
ID
IDM
VGS
VGSM
±115
±75
±800
±20
±40
L2N7002WT1G
S-L2N7002WT1G
3
1
2
SOT– 323 (SC-70)
Unit
Vdc
Vdc
mAdc
Simplified Schematic
Gate 1
3 Drain
Source 2
Vdc
Vpk
(Top View)
●THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25C
PD
225 mW
Derate above 25C
1.8 mW/C
Thermal Resistance, Junction to Ambient RθJA 556 C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25C
Derate above 25C
PD
300 mW
2.4 mW/C
Thermal Resistance, Junction to Ambient Rθ JA 417 C/W
Junction and Storage Temperature
TJ, Tstg -55 to +150
C
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
May,2015
Rev.A 1/4
1 Page LESHAN RADIO COMPANY, LTD.
L2N7002WT1G,S-L2N7002WT1G
ELECTRICAL CHARACTERISTIC CURVES
On-Region Characteristics
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10
VDS, Drain-to-Source Voltage (V)
VGS=3V
VGS=5V
VGS=7V
VGS=9V
VGS=4V
VGS=6V
VGS=8V
VGS=10V
FIG1
Temperature Static Drain-Source
On-Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-60-40-20 0 20 40 60 80 100120140
T, Temperature (℃)
FIG3
Transfer Characteristics
1.0
VGS=10V
0.8
0.6
0.4
0.2
0.0
0 1 2 3 4 5 6 7 8 9 10
-55℃
25℃
125℃
VGS, Gate Source Voltage (V)
FIG2
Temperature vs Gate Threshold Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-60 -40 -20 0 20 40 60 80 100 120 140
T, Temperature (℃)
FIG4
May,2015
Rev.A 2/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
L2N7002WT1G | Small Signal MOSFET | Leshan Radio Company |