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LMBT3946DW1T1G の電気的特性と機能

LMBT3946DW1T1GのメーカーはLeshan Radio Companyです、この部品の機能は「Dual General Purpose Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 LMBT3946DW1T1G
部品説明 Dual General Purpose Transistor
メーカ Leshan Radio Company
ロゴ Leshan Radio Company ロゴ 




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LMBT3946DW1T1G Datasheet, LMBT3946DW1T1G PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Silicon
The LMBT3946DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
LMBT3946DW1T1G
S-LMBT3946DW1T1G
FEATURES
1)Low VCE(sat), 0.4 V
2)Simplifies Circuit Design
3)Reduces Board Space
4)Reduces Component Count
5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6)hFE, 100–300
7)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
8)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
SC-88
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3946DW1T1G
LMBT3946DW1T3G
46
46
3000/Tape&Reel
10000/Tape&Reel
Q1:PNP Q2:NPN
MAXIMUM RATINGS(Ta = 25)(NPN)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
MAXIMUM RATINGS(Ta = 25)(PNP)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Junction and Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
Limits
40
60
6
200
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
VCEO
VCBO
VEBO
IC
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
PD 150
RΘJA
833
TJ,Tstg −55+150
mW
/W
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.B 1/10

1 Page





LMBT3946DW1T1G pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1G,S-LMBT3946DW1T1G
ELECTRICAL CHARACTERISTICS (Ta= 25)(NPN)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(V CC = 3.0 Vdc, V BE=
– 0.5 Vdc,I C = 10
mAdc, I B1 = 1.0 mAdc)
td
tr
Storage Time
Fall Time
(V CC = 3.0 Vdc, I C =
10 mAdc,I B1 = I B2 =
1.0 mAdc)
ts
tf
ELECTRICAL CHARACTERISTICS (Ta= 25)(PNP)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 μAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 μAdc, I C = 0)
Symbol
VBR(CEO)
VBR(CBO)
VBR(EBO)
Collector Cutoff Current
( V CE = –30 Vdc, V EB =– 3.0Vdc)
ICEX
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0Vdc)
IBL
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(I C = –0.1 mAdc, V CE = –1.0 Vdc)
(I C = –1.0 mAdc, V CE = –1.0 Vdc)
(I C = –10 mAdc, V CE = –1.0 Vdc)
(I C = –50 mAdc, V CE =– 1.0 Vdc)
(I C = –100 mAdc, V CE =– 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50mAdc, I B =– 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Characteristic
Current–Gain — Bandwidth Product
(I C = –10mAdc, V CE= –20Vdc, f = 100MHz)
Symbol
fT
Output Capacitance
(V CB = –5.0 Vdc, I E = 0, f = 1.0 MHz)
Cobo
Input Capacitance
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Cibo
2. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
Min.
–40
–40
–5
60
80
100
60
30
–0.65
Min.
250
Typ.
Typ.
35
35
200
50
Max.
–50
–50
300
–0.25
–0.4
–0.85
–0.95
Max.
4.5
10
ns
Unit
V
V
V
nA
nA
V
V
Unit
MHz
pF
pF
June,2015
Rev.B 3/10


3Pages


LMBT3946DW1T1G 電子部品, 半導体
LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1G,S-LMBT3946DW1T1G
ELRCTRICAL CHARACTERISTICS CURVES
(NPN)
2.5
IC/IB=10
2
1.5
1.4
1.2 IC/IB=10
1
0.8
1 0.6
0.4
0.5
0.2
0
0.001
0.01
0.1
IC, Collector Current(A)
1
0
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
25℃
150℃
-55℃
1
Figure 7. Collector Emitter Saturation Voltage vs.
Collector Current
Figure 8. Base Emitter Saturation Voltage vs. Collector Current
1.4
1.2 VCE=1V
1
0.8
0.6
0.4
0.2
0
0.0001
0.001
0.01
0.1
IC, Collector Current(A)
25℃
150℃
-55℃
1
Figure 9. Base Emitter Voltage vs. Collector Current
June,2015
Rev.B 6/10

6 Page



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部品番号部品説明メーカ
LMBT3946DW1T1

Transistors

Leshan Radio Company
Leshan Radio Company
LMBT3946DW1T1G

Dual General Purpose Transistor

Leshan Radio Company
Leshan Radio Company


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