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LMBT2222ADW1T3GのメーカーはLeshan Radio Companyです、この部品の機能は「Dual General Purpose Transistor」です。 |
部品番号 | LMBT2222ADW1T3G |
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部品説明 | Dual General Purpose Transistor | ||
メーカ | Leshan Radio Company | ||
ロゴ | |||
このページの下部にプレビューとLMBT2222ADW1T3Gダウンロード(pdfファイル)リンクがあります。 Total 7 pages
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN Silicon
We declare that material of product compliance
with ROHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
ORDERING INFORMATION
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
Max
150
Unit
mW
RqJA
833 °C/W
TJ, Tstg –55 to +150 °C
Device
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
LMBT2222ADW1T3G
S-LMBT2222ADW1T3G
Marking
XX
XX
Shipping
3000/Tape & Reel
10000/Tape & Reel
LMBT2222ADW1T1G
S-LMBT2222ADW1T1G
6
5
4
1
2
3
SC-88
(3) (2) (1)
Q1 Q2
(4) (5)
(6)
Rev.O 1/7
1 Page LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Note 3)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
fT
Cobo
Cibo
hie
hre
hfe
hoe
rb, Cc
NF
300
–
–
2.0
0.25
–
–
50
75
5.0
25
–
–
– MHz
8.0 pF
25 pF
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
kΩ
X 10–4
–
mmhos
ps
dB
td – 10
ns
tr – 25
ts – 225
ns
tf – 60
Rev.O 3/7
3Pages LESHAN RADIO COMPANY, LTD.
LMBT2222ADW1T1G ;S-LMBT2222ADW1T1G
1.2
1.1 VCE = 1 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
+0.5
0 RqVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0 RqVB for VBE
- 2.5
1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
10
1
Thermal Limit
0.1
100 ms
1s
10 ms
1 ms
0.01
Single Pulse Test
0.001 @ TA = 25°C
0.01 0.1
1
VCE (Vdc)
10
Figure 13. Safe Operating Area
100
Rev.O 6/7
6 Page | |||
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部品番号 | 部品説明 | メーカ |
LMBT2222ADW1T3G | Dual General Purpose Transistor | Leshan Radio Company |