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Número de pieza | LMBT3906DW1T3G | |
Descripción | Dual Bias Resistor Transistors PNP Silicon | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
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No Preview Available ! LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon
The LMBT3906DW1T1G device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices
in one package , this device is ideal for low–power surface mount
applications where board space is at a premium.
●FEATURES
1)hFE, 100–300
2)Low VCE(sat),≦0.4 V
3)Simplifies Circuit Design
4)Reduces Board Space
5)Reduces Component Count
6)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
7)S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
LMBT3906DW1T1G
S-LMBT3906DW1T1G
65 4
1
2
3
SOT-363
(3) (2)
(1)
Q1
Q2
(4) (5)
(6)
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906DW1T1G
A2 3000/Tape&Reel
LMBT3906DW1T3G
A2 10000/Tape&Reel
●MAXIMUM RATINGS(Ta = 25℃)
Parameter
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Limits
–40
–40
–5
–200
Unit
Vdc
Vdc
Vdc
mAdc
●THERMAL CHARACTERISTICS
Total Device Dissipation,
PD 150 mW
(Note 1) @ TA = 25°C
Thermal Resistance,
Junction–to–Ambient
RΘJA
833 ℃/W
Junction and Storage
temperature
TJ,Tstg −55∼+150
℃
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015
Rev.A 1/6
1 page LESHAN RADIO COMPANY, LTD.
LMBT3906DW1T1G,S-LMBT3906DW1T1G
+0.5 V
< 1 ns
10 k
10.6 V
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
< 1 ns
Cs < 4 pF*
0
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
10 k
1N916
3V
275
Cs < 4 pF*
Figure 8. Delay and Rise Time Equivalent Test
Figure 9. Storage and Fall Time Equivalent Test
June,2015
Rev.A 5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet LMBT3906DW1T3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
LMBT3906DW1T3G | Dual Bias Resistor Transistors PNP Silicon | Leshan Radio Company |
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