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MDS3653 PDF Data sheet ( 特性 )

部品番号 MDS3653
部品説明 Single P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 



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MDS3653 Datasheet, MDS3653 PDF,ピン配置, 機能
MDS3653
Single P-Channel Trench MOSFET, -30V, -14.6A, 7m
General Description
The MDS3653 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Note PC Battery.
Features
VDS = -30V
ID = -14.6A
@VGS = -10V
RDS(ON)
< 7m@VGS = -10V
< 12m@VGS = -4V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-30
±20
-14.6
-58
2.5
180
-55~150
Rating
50
25
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
January 2011. Version 1.1
1 MagnaChip Semiconductor Ltd.

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