DataSheet.jp

MDS3651 データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 MDS3651
部品説明 Single P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

Total 6 pages
		

No Preview Available !

MDS3651 Datasheet, MDS3651 PDF,ピン配置, 機能
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
VDS = -30V
ID = -6.0A @ VGS = -10V
RDS(ON)
<35m@ VGS = -10V
<55m@ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±20
-6.0
-4.1
-30
2
0.8
60.5
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
62.5
60
Unit
oC/W
January 2009. Version 2.0
1 MagnaChip Semiconductor Ltd.

1 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ MDS3651.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
MDS3651

There is a function of Single P-Channel Trench MOSFET.

MagnaChip
MagnaChip
MDS3652

There is a function of Single P-Channel Trench MOSFET.

MagnaChip
MagnaChip
MDS3653

There is a function of Single P-Channel Trench MOSFET.

MagnaChip
MagnaChip

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap