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Datasheet MDS3651 PDF ( 特性, スペック, ピン接続図 )

部品番号 MDS3651
部品説明 Single P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
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MDS3651 Datasheet, MDS3651 PDF,ピン配置, 機能
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
VDS = -30V
ID = -6.0A @ VGS = -10V
RDS(ON)
<35m@ VGS = -10V
<55m@ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±20
-6.0
-4.1
-30
2
0.8
60.5
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
62.5
60
Unit
oC/W
January 2009. Version 2.0
1 MagnaChip Semiconductor Ltd.

1 Page



MDS3651 pdf, ピン配列
ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10.0V
-6.0V
25
20
-4.5V
-5.0V
-4.0V
15
-3.5V
10
5
-3.0V
0
01234
-VDS [V]
Fig.1 On-Region Characteristics
5
60
50
VGS=-4.5V
40
30 VGS=-10V
20
10
0 5 10 15
-ID [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
1.8
Notes :
1.6
1. VGS = -10 V
2. I = 6.5 A
D
1.4
1.2
1.0
VGS=-10V
V =-4.5V
GS
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
60
50
TA = 125
40
TA = 25
30
20
10
3 4 5 6 7 8 9 10
-VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
* Notes ;
1. VDS=-5V
15
10
25
5
125
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS [V]
Fig.5 Transfer Characteristics
January 2009. Version 2.0
3
10
125
1
25
0.1
0.4 0.6 0.8 1.0
-V [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDS3651 電子部品, 半導体
Worldwide Sales Support Locations
U.S.A
Sunnyvale Office
787 N. Mary Ave. Sunnyvale
CA 94085 U.S.A
Tel : 1-408-636-5200
Fax : 1-408-213-2450
E-Mail : usasales@magnachip.com
U.K
Knyvett House The Causeway,
Staines Middx, TW18 3BA,U.K.
Tel : +44 (0) 1784-895-000
Fax : +44 (0) 1784-895-115
E-Mail : uksales@magnachip.com
Japan
Osaka Office
3F, Shin-Osaka MT-2 Bldg 3-5-36
Miyahara Yodogawa-Ku
Osaka, 532-0003 Japan
Tel : 81-6-6394-9160
Fax : 81-6-6394-9150
E-Mail : osakasales@magnachip.com
Taiwan R.O.C
2F, No.61, Chowize Street, Nei Hu
Taipei,114 Taiwan R.O.C
Tel : 886-2-2657-7898
Fax : 886-2-2657-8751
E-Mail : taiwansales@magnachip.com
China
Hong Kong Office
Suite 1024, Ocean Centre 5 Canton Road,
Tsim Sha Tsui Kowloon, Hong Kong
Tel : 852-2828-9700
Fax : 852-2802-8183
E-Mail : chinasales@magnachip.com
Shenzhen Office
Room 1803, 18/F
International Chamber of Commerce Tower
Fuhua Road3 CBD, Futian District, China
Tel : 86-755-8831-5561
Fax : 86-755-8831-5565
E-Mail : chinasales@magnachip.com
Shanghai Office
Room E, 8/F, Liaoshen International Building 1068
Wuzhong Road, (C) 201103
Shanghai, China
Tel : 86-21-6405-1521
Fax : 86-21-6505-1523
E-Mail : chinasales@magnachip.com
Korea
891, Daechi-Dong, Kangnam-Gu
Seoul, 135-738 Korea
Tel : 82-2-6903-3451
Fax : 82-2-6903-3668 ~9
Email : koreasales@magnachip.com
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
January 2009. Version 2.0
6 MagnaChip Semiconductor Ltd.

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