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MDS3651 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MDS3651
部品説明 Single P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

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MDS3651 Datasheet, MDS3651 PDF,ピン配置, 機能
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state
resistance, high switching performance and excellent
reliability
Features
VDS = -30V
ID = -6.0A @ VGS = -10V
RDS(ON)
<35m@ VGS = -10V
<55m@ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±20
-6.0
-4.1
-30
2
0.8
60.5
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
62.5
60
Unit
oC/W
January 2009. Version 2.0
1 MagnaChip Semiconductor Ltd.

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