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MDS3652 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MDS3652
部品説明 Single P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 



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MDS3652 Datasheet, MDS3652 PDF,ピン配置, 機能
MDS3652
Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ
General Description
The MDS3652 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Features
VDS = -30V
ID = -11A @VGS = -10V
RDS(ON)
< 17mΩ @VGS = -10V
< 27mΩ @VGS = -4.5V
Applications
Load Switch
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
S
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
-30
±20
-11
-7
-60
3.1
1.2
60
-55~150
Rating
40
25
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
Jul 2011. Version 1.1
1 MagnaChip Semiconductor Ltd.

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