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C30659-1550E-R08BH の電気的特性と機能

C30659-1550E-R08BHのメーカーはExcelitasです、この部品の機能は「Si and InGaAs APD Preamplifier Modules」です。


製品の詳細 ( Datasheet PDF )

部品番号 C30659-1550E-R08BH
部品説明 Si and InGaAs APD Preamplifier Modules
メーカ Excelitas
ロゴ Excelitas ロゴ 




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C30659-1550E-R08BH Datasheet, C30659-1550E-R08BH PDF,ピン配置, 機能
DATASHEET
Photon Detection
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Excelitas’ C30659-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold
and greater resilience when exposed to higher optical power densities.
Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode
(APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to
allow for ultra-low noise operation.
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH,
C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in
the C30645EH and C30662EH products. These detectors provide very good response
between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The
preamplifier section of the module uses a very low noise GaAs FET front end
designed to operate at higher transimpedance than Excelitas’ regular C30950 Series.
The C30659 is pin-to-pin compatible with the C30950 Series with a negative output.
An emitter follower is used as an output buffer stage. To obtain the wideband
characteristics, the output of these devices should be capacitively- or AC-coupled to
a 50 termination. The module must not be DC-coupled to loads of less than 2,000
Ohms. For field use, it is recommended that a temperature-compensated HV supply
be employed to maintain a constant responsivity over temperature.
Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak
response, are designed to exhibit higher damage thresholds, thus providing
greater resilience when exposed to high optical power densities.
Customization of the C30659 Series of APD Preamplifier Modules is available
to meet your specific design challenges; modifications include bandwidth and gain
optimization, use of different APDs, FC-connectorized packaging.
www.excelitas.com
C30659 Series-Rev.1.1-2013.06 Page 1 of 10
Key Features
System bandwidths of 50 MHz
and 200MHz
Ultra low noise equivalent
power (NEP)
Spectral response range:
With Si APD: 400 to 1100 nm
With InGaAs APD: 1100 to
1700 nm
Typical power consumption: 150 mW
±5 V amplifier operating voltages
50 Ω AC load capability (AC-Coupled)
Hermetically-sealed TO-8 package
High reliability
Fast overload recovery
Pin-to-pin compatible with the
C30950 Series
Light entry angle, over 130°
Model 1550E exhibits enhanced
damage threshold
RoHS-compliant
Applications
Range finding
LIDAR
Confocal microscopy

1 Page





C30659-1550E-R08BH pdf, ピン配列
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Table 2. Performance Specifications − C30659-1060 Models (1060 nm optimized response Silicon APD)
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled
Detector type
C30659-1060-3AH
(C30956EH APD)
C30659-1060-R8BH
(C30954EH APD)
Parameter
Min Typical Max Min Typical Max
Units
Active diameter
3.0 0.8 mm
Active area
7.1 0.5 mm²
Nominal field of view α (see Figure 8)
136 149 Degrees
Nominal field of view α’ (see Figure 8)
154 153 Degrees
System bandwidth, f-3dB
40 50
175 200
MHz
Bandwidth range
50 200 MHz
Temperature coefficient of Vop for constant gain
2.2
2.2 V/˚C
Vop for specified responsivity
275 Note 1 425 275 Note 1 425
V
Temperature sensor sensitivity (Note 2)
-1.8 -2.1 -2.4 -1.8 -2.1 -2.4
mV/˚C
Responsivity
at 900 nm
at 1060 nm
Rf (Internal feedback resistor)
Noise equivalent power (NEP) (Note 3)
Average from 100 kHz to f-3dB, ∆f = 1.0 Hz
at 900 nm
at 1060 nm
Output spectral noise voltage
Averaged from 100 kHz to f-3dB
450
280
22
55 90
90 125
25 35
370 kV/W
200 kV/W
12 kΩ
55 80
100 150
20 30
fW/Hz
fW/Hz
nV/Hz
Output impedance
33 40 50 33 40 50
Rise time, tr (= 900 and 1060 nm)
10% to 90% points
72
Fall time, tf (= 900 and 1060 nm)
90% to 10% points
72
Recovery time after overload (Note 4)
150 150
Output voltage swing (1 kΩ load) (Note 5)
23
23
Output voltage swing (50 Ω load) (Note 5)
0.7 0.9
0.7 0.9
DC output offset voltage
-1 0.25 1 -1 0.25 1
Positive supply current (V+)
20 35
20 35
Negative supply current (V-)
10 20
10 20
Notes:
1.
2.
3.
4.
5.
A specific value of Vop is supplied with each device. The Vop value will be within the specified range.
If = 0.1 mA at 25˚C.
NEP is calculated as the output spectral noise voltage divided by the typical responsivity.
0 dBm with 250 ns pulses.
Pulsed operation.
ns
ns
ns
V
V
V
mA
mA
www.excelitas.com
Page 3 of 10
C30659 Series-Rev.1.1-2013.06


3Pages


C30659-1550E-R08BH 電子部品, 半導体
C30659 Series 900/1060/1550/1550E
Si and InGaAs APD Preamplifier Modules
Figure 2. Typical Spectral Responsivity
3500
3000
C30659-900-R8AH
2500
2000
1500
1000
500
0
400
400
350
300
250
200
150
100
50
0
800
600 800 1000
Wavelength [nm]
1200
C30659-1550/1550E-R2AH
1000 1200 1400 1600
Wavelength [nm]
1800
500
450
400
350
300
250
200
150
100
50
0
400
100
90
80
70
60
50
40
30
20
10
0
800
C30659-1060-3AH
C30659-900-R5BH
C30659-1060-R8BH
600 800 1000
Wavelength [nm]
1200
C30659-1550/1550E-R08BH
1000 1200 1400 1600 1800
Wavelength [nm]
Figure 3. Typical Responsivity as a Function of Operating Voltage C30659-(900/1060) Series
10000
1000
100 C30659-900-R5BH
C30659-1060-3AH
C30659-1060-R8BH
C30659-900-R8AH
10
100 150 200 250 300 350 400 450 500
Operating Voltage [V]
www.excelitas.com
Page 6 of 10
C30659 Series-Rev.1.1-2013.06

6 Page



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部品番号部品説明メーカ
C30659-1550E-R08BH

Si and InGaAs APD Preamplifier Modules

Excelitas
Excelitas


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