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MJE13005-H の電気的特性と機能

MJE13005-HのメーカーはUnisonic Technologiesです、この部品の機能は「NPN SILICON POWER TRANSISTORS」です。


製品の詳細 ( Datasheet PDF )

部品番号 MJE13005-H
部品説明 NPN SILICON POWER TRANSISTORS
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




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MJE13005-H Datasheet, MJE13005-H PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
MJE13005-H
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTORS
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220 V SWITCHMODE.
FEATURES
* VCEO(SUS)= 400 V
* Reverse bias SOA with inductive loads @ TC = 100°С
* Inductive switching matrix 2 to 4 Amp, 25 and 100°С
tC @ 3A, 100°С is 180 ns (Typ)
* 700V blocking capability
* SOA and switching applications information
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/Relay drivers
* Deflection circuits
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen-Free
MJE13005L-H-x-T92-B
MJE13005G-H-x-T92-B
MJE13005-L-H-x-T92-K
MJE13005G-H-x-T92-K
Note: Pin assignment: E: Emitter B: Base
C: Collector
Package
TO-92
TO-92
Pin Assignment
123
BCE
BCE
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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MJE13005-H pdf, ピン配列
MJE13005-H
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS (Note 1)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
Collector Cutoff Current
VCBO=Rated Value,
ICBO
VBE(OFF)=1.5V
VCBO=Rated Value,
VBE(OFF)=1.5V, TC=100°С
Emitter Cutoff Current
IEBO VEB=9V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current
with bass forward biased
IS/B
Clamped Inductive SOA with Base
Reverse Biased
RBSOA
ON CHARACTERISTICS (Note 1)
hFE1 IC=0.5A, VCE=5V
DC Current Gain
hFE2
hFE3
IC=1A, VCE=5V
IC=2A, VCE=5V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Ta=100°С
Base-Emitter Saturation Voltage
IC=1A, IB=0.2A
VBE (SAT) IC=2A, IB=0.5A
IC=2A, IB=0.5A, TC=100°С
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT IC=500mA, VCE=10V, f=1MHz
COB VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
Rise Time
tR VCC=125V, IC=2A, IB1=IB2=0.4A,
Storage Time
tS tP=25μs, Duty Cycle1%
Fall Time
tF
Note: 1. Pulse Test: Pulse Width=5ms, Duty Cycle10%
Note: 2. Pulse Test: PW=300μs, Duty Cycle2%
CLASSIFICATION OF hFE1
MIN
400
15
10
8
4
RANK
RANGE
A
15 ~ 20
B
20 ~ 25
C
25 ~ 30
D
30 ~ 40
TYP MAX UNIT
V
1
mA
5
1 mA
See Fig. 11
See Fig. 12
50
60
40
0.5 V
0.6 V
1V
1V
1.2 V
1.6 V
1.5 V
MHz
65 pF
0.025
0.3
1.7
0.4
0.1
0.7
4
0.9
μs
μs
μs
μs
E
40 ~ 50
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13005-H 電子部品, 半導体
MJE13005-H
SAFE OPERATING AREA INFORMATION
NPN SILICON TRANSISTOR
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Fig. 4 is based on TC = 25°С; TJ(PK) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when TC25°С. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Fig. 4 may be found at any case
temperature by using the appropriate curve on Fig. 6.
TJ(PK) may be calculated from the data in Fig. 10. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified
under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives the complete
RBSOA characteristics.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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共有リンク

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部品番号部品説明メーカ
MJE13005-H

NPN SILICON POWER TRANSISTORS

Unisonic Technologies
Unisonic Technologies
MJE13005-K

NPN SILICON POWER TRANSISTORS

Unisonic Technologies
Unisonic Technologies
MJE13005-Q

NPN SILICON TRANSISTOR

Unisonic Technologies
Unisonic Technologies


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