DataSheet.jp

IRFSL3307PbF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFSL3307PbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 11 pages
		

No Preview Available !

IRFSL3307PbF Datasheet, IRFSL3307PbF PDF,ピン配置, 機能
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 95706D
IRFB3307PbF
IRFS3307PbF
IRFSL3307PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
75V
5.0m:
:G max. 6.3m
S ID
120A
GDS
TO-220AB
IRFB3307PbF
GDS
D2Pak
IRFS3307PbF
GDS
TO-262
IRFSL3307PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Continuous Drain Current, VGS @ 10V
dContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RJC
Parameter
kJunction-to-Case
RCS
RJA
RJA
Case-to-Sink, Flat Greased Surface , TO-220
kJunction-to-Ambient, TO-220
jkJunction-to-Ambient (PCB Mount) , D2Pak
Max.
120™l
84™l
510
l200
l1.3
± 20
-55 to + 175
300
x x10lb in (1.1N m)
270
See Fig. 14, 15, 16a, 16b
Typ.
–––
0.50
–––
–––
Max.
l0.61
–––
62
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
01/20/12

1 Page





ページ 合計 : 11 ページ
PDF
ダウンロード
[ IRFSL3307PbF.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRFSL3307PbF

HEXFET Power MOSFET

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap