IRF7738L2PBF Datasheet PDF - International Rectifier
| Part Number | IRF7738L2PBF | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
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Features
• Advanced Process Technology
• Optimized for Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS Compliant and Halogen free
IRF7738L2PbF
DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
40V
1.2mΩ
max.
1.6mΩ
ID (Silicon Limited)
Qg
184A
129nC
SSS
D G SSS
D
Applicable DirectFET® Outline and Substrate Outline
SB SC
M2 M4
L 6 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF7738L2TR(1)PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-
state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-
1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform
coupled with the latest silicon technology allows the IRF7738L2TR(1)PbF to offer substantial system level savings and performance improvement specifically
in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance
and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These
features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications.
Part number
IR F7 73 8L 2T R P b F
IR F7 73 8L 2T R 1 P b F
Package T ype
D ire ctF E T 2 L a rg e C a n
D ire ctF E T 2 L a rg e C a n
Standard Pack
Form
Q u an tity
Tape and Reel
4000
Tape and Reel
1000
N ote
"T R" suffix
"T R 1 " suffix E O L no tic e # 2 6 4
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
gContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
Max.
40
± 20
184
130
35
315
736
94
3.3
134
538
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
0.63
Max.
45
–––
–––
1.6
0.5
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014
|
| |
 
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
DC 1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
1
0.10
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
IRF7738L2PbF
600
ID
500 TOP 17A
29A
BOTTOM 109A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
Ri (°C/W)
0.00399
τi (sec)
18.81517
τCτ 0.81430
0.03055
τ3 τ3
τ4τ4
0.15982
0.00014
0.62239 0.00402
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
1000
100
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
10 0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
1.0E-01
February 13, 2014
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| Information | Total 10 Pages | |
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