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7NM60のメーカーはUNISONIC TECHNOLOGIESです、この部品の機能は「600V N-CHANNEL POWER MOSFET」です。 |
部品番号 | 7NM60 |
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部品説明 | 600V N-CHANNEL POWER MOSFET | ||
メーカ | UNISONIC TECHNOLOGIES | ||
ロゴ | |||
このページの下部にプレビューと7NM60ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
UNISONIC TECHNOLOGIES CO., LTD
7NM60
Preliminary
7.4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7NM60 is a high voltage super junction MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 0.9Ω @ VGS = 10V, ID = 3.7A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM60L-TF1-T
7NM60G-TF1-T
7NM60L-TN3-R
7NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R209-044.a
1 Page 7NM60
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600 V
±30 V
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
ID
IDM
EAS
EAR
dv/dt
7.4 A
7.4 A
29.6 A
65 mJ
14.2 mJ
4.5 V/ns
Power Dissipation
Derate above 25°C
TO-220F1
TO-252
TO-220F1
TO-252
PD
48 W
60 W
0.38 W/°C
0.48 W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=32.5mH, IAS=2A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤7.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F1
TO-252
TO-220F1
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
2.6
2.08
UNIT
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R209-044.a
3Pages 7NM60
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL
D.U.T.
VDD
Switching Test Circuit
Power MOSFET
Switching Waveforms
Same
12V
50kΩ
0.2µF
0.3µF
Type as
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R209-044.a
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ 7NM60 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
7NM60 | 600V N-CHANNEL POWER MOSFET | UNISONIC TECHNOLOGIES |
7NM65 | N-CHANNEL SUPER-JUNCTION MOSFET | Unisonic Technologies |