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PDF FTA14N50C Data sheet ( 特性 )

部品番号 FTA14N50C
部品説明 N-Channel MOSFET
メーカ IPS
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FTA14N50C Datasheet, FTA14N50C PDF,ピン配置, 機能
N-Channel MOSFET
Applications:
• Adaptor
• TV Main Power
• LCD Panel Power
FTP14N50C
FTA14N50C
Pb Lead Free Package and Finish
VDSS
500V
RDS(ON) (Max.)
0.46 Ω
ID
14 A
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
Ordering Information
PART NUMBER
FTP14N50C
FTA14N50C
PACKAGE
TO-220
TO-220F
BRAND
FTP14N50C
FTA14N50C
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP14N50C FTA14N50C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
500
14.0 14.0*
8.50
56
188 50
1.52 0.40
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=1 mH, ID=21 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
225
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP14N50C FTA14N50C Units
0.66
62
2.5
100 oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 4
FTP14N50C/FTA14N50C Preliminary Mar. 2009

1 Page





FTA14N50C pdf, ピン配列
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
-- 14
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 56
A
VSD Diode Forward Voltage
-- -- 1.5 V
trr Reverse Recovery Time
-- 345 578
ns
Qrr Reverse Recovery Charge
-- 2.5 3.8
uC
Test Conditions
Integral pn-diode
in MOSFET
IS=14A, VGS=0V
VGS=0 V
IF=14A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 14 A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2009 InPower Semiconductor Co., Ltd.
Page 3 of 4
FTP14N50C/FTA14N50C Preliminary Mar. 2009


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