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Datasheet HY4903B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | HY4903B | N-Channel Enhancement Mode MOSFET HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available
Pin Description
DS G TO-2 |  HOOYI | mosfet |
HY4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HY4306A | N-Channel Enhancement Mode MOSFET HY4306W/A
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
Applications
• Switching applicati HOOYI mosfet | | |
| 2 | HY4306B | N-Channel Enhancement Mode MOSFET HY4306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat HOOYI mosfet | | |
| 3 | HY4306P | N-Channel Enhancement Mode MOSFET HY4306P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.6 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching applicat HOOYI mosfet | | |
| 4 | HY4306W | N-Channel Enhancement Mode MOSFET HY4306W/A
N-Channel Enhancement Mode MOSFET
Features
• 60V/230A
RDS(ON) = 2.2 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
S
D G
TO-247-3L
S
D G
TO-3P-3L
Applications
• Switching applicati HOOYI mosfet | | |
| 5 | HY4903B | N-Channel Enhancement Mode MOSFET HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available
Pin Description
DS G TO-2 HOOYI mosfet | | |
| 6 | HY4903P | N-Channel Enhancement Mode MOSFET HY4903P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/290A
RDS(ON)= 1.6mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Excellent CdV/dt effect decline • Advanced high cell density Trench technology • Halogen - Free Device Available
Pin Description
DS G TO-2 HOOYI mosfet | |
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