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STP19NF20 の電気的特性と機能

STP19NF20のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP19NF20
部品説明 N-CHANNEL POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP19NF20 Datasheet, STP19NF20 PDF,ピン配置, 機能
STB19NF20, STD19NF20,
STF19NF20, STP19NF20
N-channel 200 V, 0.11 typ., 15 A MESH OVERLAY™
Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 packages
Datasheet — production data
TAB
3
1
D²PAK
7$%


DPAK
TAB
Features
Type
STB19NF20
STD19NF20
STF19NF20
STP19NF20
VDS
RDS(on)
max.
200 V
200 V
200 V
200 V
0.16
0.16
0.16
0.16
ID
15 A
15 A
15 A
15 A
PTOT
90 W
90 W
25 W
90 W
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Applications
Switching application
* 
6 
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
$0Y
Order code
STB19NF20
STD19NF20
STF19NF20
STP19NF20
Table 1. Device summary
Marking
Package
19NF20
D2PAK
19NF20
DPAK
19NF20
TO-220FP
19NF20
TO-220
Packing
Tape and reel
Tube
April 2015
This is information on a product in full production.
Doc ID 12758 Rev 6
1/27
www.st.com

1 Page





STP19NF20 pdf, ピン配列
STB19NF20, STD19NF20, STF19NF20, STP19NF20
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, DPAK,
TO-220
TO-220FP
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID
IDM(2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT
VISO
dv/dt(3)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s;
TC = 25 °C)
Peak diode recovery voltage slope
Tj Operating junction temperature
Tstg Storage temperature
1. Limited by package.
2. Pulse width limited by safe operating area.
3. ISD 15 A, di/dt 300 A/µs, VDD = 80% V(BR)DSS.
200
± 20
15
9.45
60
90
15(1)
9.45(1)
60 (1)
25
2500
15
-55 to 150
Unit
V
V
A
A
A
W
V
V/ns
°C
Symbol
Rthj-case
Rthj-pcb
Rthj-a
Table 3. Thermal data
Parameter
D²PAK
Value
Unit
DPAK TO-220 TO-220FP
Thermal resistance junction-case
1.39
5
Thermal resistance junction-pcb 35 50
Thermal resistance junction-
ambient
°C/W
62.5
Symbol
IAR
EAS
Table 4. Avalanche data
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max.)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 12758 Rev 6
Value
15
110
Unit
A
mJ
3/27
27


3Pages


STP19NF20 電子部品, 半導体
Electrical characteristics
STB19NF20, STD19NF20, STF19NF20, STP19NF20
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK, DPAK Figure 3. Thermal impedance for D²PAK, DPAK
and TO-220
and TO-220
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics
VGS = 8,9,10 V
7V
6V
5V
4V
Figure 7. Transfer characteristics
6/27 Doc ID 12758 Rev 6

6 Page



ページ 合計 : 27 ページ
 
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共有リンク

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部品番号部品説明メーカ
STP19NF20

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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