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SVF10N65TのメーカーはSilan Microelectronicsです、この部品の機能は「650V N-CHANNEL MOSFET」です。 |
部品番号 | SVF10N65T |
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部品説明 | 650V N-CHANNEL MOSFET | ||
メーカ | Silan Microelectronics | ||
ロゴ | |||
このページの下部にプレビューとSVF10N65Tダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SVF10N65T/F_Datasheet
10A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF10N65T/F is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 10A,650V,RDS(on)(typ.)=0.80Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF10N65T
SVF10N65F
Package
TO-220-3L
TO-220F-3L
Marking
SVF10N65T
SVF10N65F
Material
Pb free
Pb free
Packing
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 1 of 8
1 Page SVF10N65T/F_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse p-n
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=10A,VGS=0V
Trr IS=10A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=5.82A, VDD=150V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
450
4.2
Max.
10
40
1.3
--
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 3 of 8
3Pages SVF10N65T/F_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2011.01.26
Page 6 of 8
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ SVF10N65T データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SVF10N65F | 650V N-CHANNEL MOSFET | Silan Microelectronics |
SVF10N65T | 650V N-CHANNEL MOSFET | Silan Microelectronics |