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CEM3501L PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 CEM3501L
部品説明 P-Channel Enhancement Mode Field Effect Transistor
メーカ CET
ロゴ CET ロゴ 

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CEM3501L Datasheet, CEM3501L PDF,ピン配置, 機能
CEM3501L
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -5A, RDS(ON) = 65m@VGS = -10V.
RDS(ON) = 75m@VGS = -4.5V.
RDS(ON) = 100m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID -5
IDM -20
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
This is preliminary information on a new product in development now
Specification and data are subject to change without notice .
1
Rev 1. 2012.Mar
http://www.cetsemi.com

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CEM3501L

P-Channel Enhancement Mode Field Effect Transistor

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