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CEC8218 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 CEC8218
部品説明 Dual N-Channel Enhancement Mode Field Effect Transistor
メーカ CET
ロゴ CET ロゴ 

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CEC8218 Datasheet, CEC8218 PDF,ピン配置, 機能
CEC8218
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 7A, RDS(ON) = 20m@VGS = 4.5V.
RDS(ON) = 28m@VGS = 2.5V.
RDS(ON) = 48m@VGS = 1.8V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
*1K
G1
*1K
G2
S1
*Typical value by design
5 67 8
Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 7
IDM 28
Maximum Power Dissipation
PD 1.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
D
S2
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
83
Units
C/W
Details are subject to change without notice .
1
Rev 3. 2015.Mar
http://www.cet-mos.com

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CEC8218

Dual N-Channel Enhancement Mode Field Effect Transistor

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