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MBRF2050 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MBRF2050
部品説明 Isolated 20.0 AMPS. Schottky Barrier Rectifiers
メーカ Taiwan Semiconductor
ロゴ Taiwan Semiconductor ロゴ 

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MBRF2050 Datasheet, MBRF2050 PDF,ピン配置, 機能
MBRF2035 - MBRF20150
Isolated 20.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.063(1.6)
MAX
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.161(4.1)
.146(3.7)
.071(1.8) .543(13.8)
MAX
.512(13.2)
2
.100(2.55)
PIN 1
.100(2.55)
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units
2035 2045 2050 2060 2090 20100 20150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
35 45 50 60 90 100 150
24 31 35 42 63 70 105
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VDC
I(AV)
35 45 50 60 90 100 150
20
V
A
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=125oC
IFRM
40
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=20A, TC=25oC
IF=20A, TC=125oC
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage (Note2)
@ Tc=125 oC
IRRM
VF
IR
1.0
0.75
0.65
0.2
15
0.5 A
0.82
0.72
0.95
0.87
1.02
0.98
V
0.2 0.1 mA
10 5.0 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj 560
420 pF
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
3.0
-65 to +150
-65 to +175
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Version: A06

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