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Datasheet CEA6200 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CEA6200 | N-Channel Enhancement Mode Field Effect Transistor CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
|  CET | transistor |
CEA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CEA3055 | N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology transistor | | |
| 2 | CEA3055L | N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology transistor | | |
| 3 | CEA3252 | N-Channel Enhancement Mode Field Effect Transistor CEA3252
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
ABSO CET transistor | | |
| 4 | CEA6200 | N-Channel Enhancement Mode Field Effect Transistor CEA6200
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 1.8A, RDS(ON) = 250mΩ @VGS = 10V. RDS(ON) = 330mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
CET transistor | | |
| 5 | CEA6426 | N-Channel Enhancement Mode Field Effect Transistor CEA6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.6A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
D
D SOT-89
S D G
G
S
ABSOLUTE MAXIMU CET transistor | | |
| 6 | CEA6861 | P-Channel Enhancement Mode Field Effect Transistor CEA6861
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V. RDS(ON) = 180mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D
D S D G SOT-89
G
S
ABSOLUTE MAXI CET transistor | | |
| 7 | CEAS03xV0-G | Bidirectional ESD / Transient Suppressor
Bidirectional ESD / Transient Suppressor
CE Series -G (RoHS Device)
Features
(16kV) IEC 61000-4-2 rating Surface mount package High component density
SOT23-6
-VBD 0V +VBD
Applications
ESD suppression Transient suppression Automotive CAN Bus
Schematic
SOT23-5 SOT-23-3
3 2 1
 Comchip Technology tvs-diode | |
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