DataSheet.jp

IRFB4410ZPbF の電気的特性と機能

IRFB4410ZPbFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFB4410ZPbF
部品説明 HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




このページの下部にプレビューとIRFB4410ZPbFダウンロード(pdfファイル)リンクがあります。

Total 12 pages

No Preview Available !

IRFB4410ZPbF Datasheet, IRFB4410ZPbF PDF,ピン配置, 機能
IRFB4410ZPbF
IRFS4410ZPbF
IRFSL4410ZPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
7.2m:
:G max. 9.0m
S ID (Silicon Limited)
97A
D
D
D
DS
G
TO-220AB
IRFB4410ZPbF
DS
G
D2Pak
IRFS4410ZPbF
DS
G
TO-262
IRFSL4410ZPbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
Package Type
TO-220
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
50
50
800
800
Orderable Part Number
IRFB4410ZPbF
IRFSL4410ZPbF
IRFS4410ZPbF
IRFS4410ZTRLPbF
IRFS4410ZTRRPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
dSingle Pulse Avalanche Energy
IAR Avalanche Current
fEAR Repetitive Avalanche Energy
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Symbol
Parameter
jJunction-to-Case
Case-to-Sink, Flat Greased Surface , TO-220
jJunction-to-Ambient, TO-220
ijJunction-to-Ambient (PCB Mount) , D2Pak
Max.
97
69
390
230
1.5
± 20
16
-55 to + 175
300
x x10lb in (1.1N m)
242
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 25, 2014

1 Page





IRFB4410ZPbF pdf, ピン配列
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
1
0.1
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
VDS = 50V
60μs PULSE WIDTH
100
10
TJ = 175°C
1
TJ = 25°C
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
4.5V
10
1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
ID = 58A
VGS = 10V
2.0
1.5
1.0
0.1
234567
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
12.0
ID= 58A
10.0
8.0
VDS= 80V
VDS= 40V
VDS= 20V
6.0
4.0
2.0
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
3 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 25, 2014


3Pages


IRFB4410ZPbF 電子部品, 半導体
IRFB4410ZPbF/IRFS4410ZPbF/IRFSL4410ZPbF
4.5 20
IF = 39A
4.0
VR = 85V
TJ = 25°C _____
3.5 15 TJ = 125°C ----------
3.0
2.5
2.0 ID = 150μA
ID = 250μA
1.5 ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25 0
25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
10
5
0
100 200 300 400 500 600 700
dif/dt (A/μs)
Fig. 17 - Typical Recovery Current vs. dif/dt
20
IF = 58A
VR = 85V
TJ = 25°C _____
15 TJ = 125°C ----------
400
350
300
250
IF = 39A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
10 200
150
5 100
50
0
100 200 300 400 500 600 700
dif/dt (A/μs)
Fig. 18 - Typical Recovery Current vs. dif/dt
0
100 200 300 400 500 600 700
dif/dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
450
400
350
300
IF = 58A
VR = 85V
TJ = 25°C _____
TJ = 125°C
----------
250
200
150
100
50
0
100 200 300 400 500 600 700
dif/dt (A/μs)
Fig. 20 - Typical Stored Charge vs. dif/dt
6 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 25, 2014

6 Page



ページ 合計 : 12 ページ
 
PDF
ダウンロード
[ IRFB4410ZPbF データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFB4410ZPbF

HEXFET Power MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap