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Número de pieza | MDF12N50B | |
Descripción | N-Channel MOSFET | |
Fabricantes | MagnaChip | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MDF12N50B (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! MDP12N50B / MDF12N50B
N-Channel MOSFET 500V, 11.5A, 0.65Ω
General Description
The MDP/F12N50B uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
MDP/F12N50B is suitable device for SMPS, high
Speed switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
RDS(ON) ≤ 0.65Ω
@VGS = 10V
@VGS = 10V
Applications
Power Supply
PFC
Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP12N50B MDF12N50B
500
±30
11.5 11.5*
7.0 7.0*
46 46*
165 42
1.33 0.32
16.5
4.5
460
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
May 2012. Version 1.1
Symbol
RθJA
RθJC
MDP12N50B
62.5
0.75
MDF12N50B
62.5
3.0
Unit
oC/W
1 MagnaChip Semiconductor Ltd.
1 page 102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10-1
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1 100 101 102
-VDS, Drain-Source Voltage [V]
Fig.13 Maximum Safe Operating Area
MDF12N50B (TO-220F)
10000
8000
single Pulse
RthJC = 3.0℃/W
TC = 25℃
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.14 Single Pulse Maximum Power
Dissipation – MDF12N50B (TO-220F)
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=110℃/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.15 Transient Thermal Response Curve
MDF12N50B (TO-220F)
May 2012. Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MDF12N50B.PDF ] |
Número de pieza | Descripción | Fabricantes |
MDF12N50 | N-Channel MOSFET 500V | MagnaChip |
MDF12N50B | N-Channel MOSFET | MagnaChip |
MDF12N50F | N-Channel MOSFET | MagnaChip |
MDF12N50TH | N-Channel MOSFET 500V | MagnaChip |
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