|
|
PDF 3DD5011AH Data sheet ( Hoja de datos )
| Número de pieza | 3DD5011AH | |
| Descripción | Silicon NPN Bipolar Transistor | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 3DD5011AH (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Huajing Discrete Devices
○R
Silicon NPN Bipolar Transistor for Low-frequency
Amplification
3DD5011AH
1 Description：
3DD5011AH, silicon NPN low frequency power
transistor, is used to colour TV switching regulator.
Package：TO-3P(H)IS.
2 Characteristics：
● Low switching power dissipation
● Low reversing leaking current
● Good high-temperature characteristic
● Good current characteristic
● High reliability
3 Application：
The device is mainly used in 14 and
21 inch colour TV switching regulator.
Typical Data
VCEO
IC
Ptot（TC=25℃）
600
10
55
V
A
W
12
3
1. B 2. C
3. E
Equivalent circuit
C
B
E
The name and content of poisonous and harmful material in products
Part’s Name
hazardous substance
CONTENT
Pb
≤0.1%
Hg
≤0.1%
Cd
≤0.01%
Cr(VI)
≤0.1%
PBB
≤0.1%
PBDE
≤0.1%
Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound
○
○
○
○
○
○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder
× ○○ ○ ○○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the
allowed range of Eurogroup’s ROHS.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 / 5 2008
1 page  
Huajing Discrete Devices
6 External Dimension TO-3P(H)IS.
○R 3DD5011AH
B CE
7 Explanation
7-1Packing
1） small packing, 100 pieces per plate
2） middle packing, 5plates per middle paper box
3） big packing, 5 box per big paper case
7-2 Warnings：
1）All the products made from Huajing Microelectronics should be in accordance with the
corresponding electrical characteristics specifications and package sizes described in the
publication. Interrelated technological compact must be signed in both sides before making the
special products customers demand.
2）Exceeding the Maximum Ratings is forbidden when the device is working. It is suggested that the
device works under 80% of the Maximum Ratings. During installation please try to reduce the
mechanical stress to prevent the partial distortion and transmogrification of the device case, which
may result in application failure, avoid approching to heat component, pay attention to the
temperature and time in welding and adding stannum.
3) This publication is made by Huajing Microelectronics and subject to regular change without notice.
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 / 5 2008
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 3DD5011AH.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 3DD5011A9 | Silicon NPN Bipolar Transistor | Huajing Microelectronics |
| 3DD5011AH | Silicon NPN Bipolar Transistor | Huajing Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |