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SVF4N60M の電気的特性と機能

SVF4N60MのメーカーはSILAN MICROELECTRONICSです、この部品の機能は「600V N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SVF4N60M
部品説明 600V N-CHANNEL MOSFET
メーカ SILAN MICROELECTRONICS
ロゴ SILAN MICROELECTRONICS ロゴ 




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SVF4N60M Datasheet, SVF4N60M PDF,ピン配置, 機能
SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement
mode power MOS field effect transistor which is produced
using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
4A, 600V, RDS(on)(typ)=2.0@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60DTR
SVF4N60MJ
SVF4N60M
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-262-3L
TO-252-2L
TO-252-2L
TO-251J-3L
TO-251D-3L
Marking
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60D
SVF4N60MJ
SVF4N60M
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tube
Tube
Tape & Reel
Tube
Tube
REV:1.6
2012.07.24
Page 1 of 11

1 Page





SVF4N60M pdf, ピン配列
Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
VSD IS=4.0A,VGS=0V
Reverse Recovery Time
Trr IS=4.0A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note 2)
Notes:
1. L=30mH, IAS=3.45A, VDD=155V, RG=25, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
441.53
1.98
Max.
4.0
16
1.4
--
--
Unit
A
V
ns
µC
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
10
Variable
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
1 VGS=10V
VGS=15V
0.1
0.1
Notes:
1.250µS pulse test
2.TC=25°C
1 10 100
Drain-Source Voltage VDS(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
4.5
4.0 VGS=10V
VGS=20V
3.5
3.0
2.5
2.0
1.5
0
Note: TJ=25°C
246
Drain Current ID(A)
8
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
0 1 2 3 4 5 6 7 8 9 10
Gate-Source VoltageVGS(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
-55°C
25°C
150°C
10
Notes:
1.250µS pulse test
2.VGS=0V
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2
Source-Drain VoltageVSD(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
Page 3 of 11


3Pages


SVF4N60M 電子部品, 半導体
Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
TYPICAL TEST CIRCUIT
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
Page 6 of 11

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SVF4N60D

600V N-CHANNEL MOSFET

SILAN MICROELECTRONICS
SILAN MICROELECTRONICS
SVF4N60F

600V N-CHANNEL MOSFET

SILAN MICROELECTRONICS
SILAN MICROELECTRONICS
SVF4N60FG

600V N-CHANNEL MOSFET

SILAN MICROELECTRONICS
SILAN MICROELECTRONICS
SVF4N60K

600V N-CHANNEL MOSFET

SILAN MICROELECTRONICS
SILAN MICROELECTRONICS


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