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IRL7833LPbFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRL7833LPbF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRL7833LPbFダウンロード(pdfファイル)リンクがあります。 Total 12 pages
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
l Lead-Free
PD - 95270
IRL7833PbF
IRL7833SPbF
IRL7833LPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 3.8m
32nC
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL7833
D2Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
hCase-to-Sink, Flat, Greased Surface
hJunction-to-Ambient
gÃJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
30
± 20
150f
110f
600
140
72
0.96
-55 to + 175
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
05/18/04
1 Page IRL7833/S/LPbF
1000
100
TOP
BOTTOM
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
10 2.7V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
10
2.7V
TOP
BOTTOM
VGS
10V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
2.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRL7833/S/LPbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
6
2000
1600
TOP
BOTTOM
ID
12A
21A
30A
1200
800
400
0
25 50 75 100 125 150 175
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
www.irf.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRL7833LPbF | Power MOSFET ( Transistor ) | International Rectifier |