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PDF IRF8302MPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF8302MPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRF8302MPbF
l RoHs Compliant and Halogen-Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ideal for CPU Core DC-DC Converters
35nC 8.9nC 5.1nC 40nC 29nC 1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
MX
DirectFET ISOMETRIC
SQ SX ST
MQ MX MT MP
Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base Part number
IRF8302MPbF
Package Type
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8302MTRPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
6
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
5 ID = 31A
4
3 TJ = 125°C
2
1 TJ = 25°C
0
0 2 4 6 8 10 12 14 16 18 20
14.0
12.0 ID= 25A
10.0
8.0
Max.
30
±20
31
25
190
250
260
25
VDS= 24V
VDS= 15V
VDS= 6.0V
Units
V
A
mJ
A
6.0
4.0
2.0
0.0
0 10 20 30 40 50 60 70 80 90 100
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A.
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 17, 2014
1 page  
1000
100
10
TJ = 150°C
1 TJ = 25°C
TJ = -40°C
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
1000
100
10
IRF8302MPbF
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100µsec
10msec
1msec
DC
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.4
2.2
150
2.0
100 ID = 10mA
1.8
50 1.6
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 1.3A
2.2A
BOTTOM 25A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 17, 2014
5 Page | ||
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| PDF Descargar | [ Datasheet IRF8302MPBF.PDF ] | |
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